Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -60 --- --- V

VGS=-10V , ID=-30A --- 10.5 13.5RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V , ID=-30A --- 13.5 17.5

mΩ

VGS(th) Gate Threshold Voltage -1.0 -1.85 -2.5 V VGS=VDS , ID =-250uA

VDS=-32V , VGS=0V , TJ=25℃ --- --- 1 IDSS Drain-Source Leakage Current uA

IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA

Qg Total Gate Charge --- 121 ---

Qgs Gate-Source Charge --- 20 ---

Qgd Gate-Drain Charge --- 32 ---

nC

Td(on) Turn-On Delay Time --- 20 ---

Tr Rise Time --- 20 ---

Td(off) Turn-Off Delay Time --- 205 ---

Tf Fall Time --- 90 ---

ns

Ciss Input Capacitance --- 5600 ---

Coss Output Capacitance --- 510 ---

Crss Reverse Transfer Capacitance --- 480 ---

pF

Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current --- --- -64 ATC=25℃

VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V

P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Diode Characteristics

WSD90P06DN56 P-Ch MOSFET

Page 2www.winsok.tw Dec.2014

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given

application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

VDS = -30 V, VGS = -10 V,

ID = -17A

VDD = -30 V, RL = 30Ω

ID =-1 A, VGEN = -10 V, Rg = 6

VDS=-30V,VGS=0V, f=1.0MHz